2N7002LT1
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2N7002LT1
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2N7002LT1

Brand:ON
Model:2N7002LT1
stock:27371
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing CT
series -
Part status stop production
working temperature -
Encapsulation/Housing SOT-23-3(TO-236)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 115mA(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) -
On resistance (maximum) for different Ids and Vgs 7.5 Ω @ 500mA,10V
Vgs (th) (maximum) for different Ids 2.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) -
Input capacitance at different Vds (Ciss) (maximum) 50 pF @ 25 V
FET function -
Power dissipation (maximum) -
Common problem
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