FQPF44N10
Home
Category
MOSFET
FQPF44N10
The pictures are for reference only
like

FQPF44N10

Brand:ON
Model:FQPF44N10
stock:31289
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Through-Hole
packing pipe
series QFET®
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing TO-220F-3
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 27A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 39 mΩ @ 13.5A,10V
Vgs (th) (maximum) for different Ids 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 62 nC @ 10 V
Vgs (max) ±25V
Input capacitance at different Vds (Ciss) (maximum) 1800 pF @ 25 V
FET function -
Power dissipation (maximum) 55W(Tc)
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer