NTD20N03L27-1G
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NTD20N03L27-1G
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NTD20N03L27-1G

Brand:ON
Model:NTD20N03L27-1G
stock:97704
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Through-Hole
packing pipe
series -
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing I-PAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 20A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4V,5V
On resistance (maximum) for different Ids and Vgs 27 mΩ @ 10A,5V
Vgs (th) (maximum) for different Ids 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 18.9 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1260 pF @ 25 V
FET function -
Power dissipation (maximum) 1.75W(Ta),74W(Tc)
Common problem
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