NTMSD2P102R2SG
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NTMSD2P102R2SG
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NTMSD2P102R2SG

Brand:ON
Model:NTMSD2P102R2SG
stock:46291
Store:ShenZhen/Hongkong
DataSheet: Search
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR,bulk
series -
Part status stop production
working temperature -
Encapsulation/Housing 8-SOIC
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 2.3A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) -
On resistance (maximum) for different Ids and Vgs 90 mΩ @ 2.4A,4.5V
Vgs (th) (maximum) for different Ids -
Gate charge (Qg) at different Vgs (maximum) 18 nC @ 4.5 V
Vgs (max) -
Input capacitance at different Vds (Ciss) (maximum) 750 pF @ 16 V
FET function Schottky diode (isolated)
Power dissipation (maximum) -
Common problem
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