NTTFS5820NLTWG
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NTTFS5820NLTWG
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NTTFS5820NLTWG

Brand:ON
Model:NTTFS5820NLTWG
stock:74919
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series -
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-WDFN(3.3x3.3)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 11A(Ta),37A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 11.5 mΩ @ 8.7A,10V
Vgs (th) (maximum) for different Ids 2.3V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 28 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1462 pF @ 25 V
FET function -
Power dissipation (maximum) 2.7W(Ta),33W(Tc)
Common problem
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