Installation type | Surface mount |
packing | TR,bulk |
series | - |
Part status | stop production |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | 8-WDFN(3.3x3.3) |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 30 V |
Current at 25 ° C - continuous drain (Id) | 6.6A(Ta),34A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
On resistance (maximum) for different Ids and Vgs | 11 mΩ @ 10A,10V |
Vgs (th) (maximum) for different Ids | 2.2V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 8.8 nC @ 4.5 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 920 pF @ 15 V |
FET function | - |
Power dissipation (maximum) | 810mW(Ta),22.3W(Tc) |