5LP01M-TL-E
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5LP01M-TL-E
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5LP01M-TL-E

Brand:ON
Model:5LP01M-TL-E
stock:56103
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,bulk
series -
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing MCP
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 50 V
Current at 25 ° C - continuous drain (Id) 70mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 1.5V,4V
On resistance (maximum) for different Ids and Vgs 23 Ω @ 40mA,4V
Vgs (th) (maximum) for different Ids -
Gate charge (Qg) at different Vgs (maximum) 1.4 nC @ 10 V
Vgs (max) ±10V
Input capacitance at different Vds (Ciss) (maximum) 7.4 pF @ 10 V
FET function -
Power dissipation (maximum) 150mW(Ta)
Common problem
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