FCPF190N65FL1
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FCPF190N65FL1
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FCPF190N65FL1

Brand:ON
Model:FCPF190N65FL1
stock:64591
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Common problem
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Installation type Through-Hole
packing bulk,pipe
series SuperFET® II
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TO-220F-3
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 650 V
Current at 25 ° C - continuous drain (Id) 20.6A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 190 mΩ @ 10A,10V
Vgs (th) (maximum) for different Ids 5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 78 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 3055 pF @ 100 V
FET function -
Power dissipation (maximum) 39W(Tc)
Common problem
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