DMN7022LFGQ-13
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DMN7022LFGQ-13
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DMN7022LFGQ-13

Brand:Diodes
Model:DMN7022LFGQ-13
stock:34504
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.60
The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PowerDI3333-8
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 75 V
Current at 25 ° C - continuous drain (Id) 23A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 22 mΩ @ 7.2A,10V
Vgs (th) (maximum) for different Ids 3V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 56.5 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 2737 pF @ 35 V
FET function -
Power dissipation (maximum) 2W(Ta)
Common problem
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