ZXMN10B08E6TC
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likeZXMN10B08E6TC
Brand：Diodes
Model：ZXMN10B08E6TC
stock：26170
Store：ShenZhen/Hongkong
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| Installation type | Surface mount |
| packing | TR |
| series | - |
| Part status | stop production |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | SOT-26 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 100 V |
| Current at 25 ° C - continuous drain (Id) | 1.6A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.3V,10V |
| On resistance (maximum) for different Ids and Vgs | 230 mΩ @ 1.6A,10V |
| Vgs (th) (maximum) for different Ids | 3V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 9.2 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 497 pF @ 50 V |
| FET function | - |
| Power dissipation (maximum) | 1.1W(Ta) |
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