TK33S10N1L,LXHQ
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TK33S10N1L,LXHQ
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TK33S10N1L,LXHQ

Brand:Toshiba
Model:TK33S10N1L,LXHQ
stock:50153
Store:ShenZhen/Hongkong
DataSheet: Search
Price:1+
¥1.95
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Installation type Surface mount
packing TR,CT
series U-MOSVIII-H
Part status On sale
working temperature 175°C
Encapsulation/Housing DPAK+
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 33A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 9.7 mΩ @ 16.5A,10V
Vgs (th) (maximum) for different Ids 2.5V @ 500µA
Gate charge (Qg) at different Vgs (maximum) 33 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 2250 pF @ 10 V
FET function -
Power dissipation (maximum) 125W(Tc)
Common problem
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