SSM3J66MFV,L3F
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likeSSM3J66MFV,L3F
Brand：Toshiba
Model：SSM3J66MFV,L3F
stock：30569
Store：ShenZhen/Hongkong
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| Installation type | Surface mount |
| packing | TR,CT |
| series | U-MOSVI |
| Part status | On sale |
| working temperature | 150°C |
| Encapsulation/Housing | VESM |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 20 V |
| Current at 25 ° C - continuous drain (Id) | 800mA(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 1.2V,4.5V |
| On resistance (maximum) for different Ids and Vgs | 390mΩ @ 800mA,4.5V |
| Vgs (th) (maximum) for different Ids | 1V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 1.6 nC @ 4.5 V |
| Vgs (max) | +6V,-8V |
| Input capacitance at different Vds (Ciss) (maximum) | 100 pF @ 10 V |
| FET function | - |
| Power dissipation (maximum) | 150mW(Ta) |
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