TPC6011(TE85L,F,M)
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TPC6011(TE85L,F,M)
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TPC6011(TE85L,F,M)

Brand:Toshiba
Model:TPC6011(TE85L,F,M)
stock:11025
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series U-MOSIV
Part status Final sale
working temperature 150°C(TJ)
Encapsulation/Housing VS-6(2.9x2.8)
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 6A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 20 mΩ @ 3A,10V
Vgs (th) (maximum) for different Ids 2.5V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 14 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 640 pF @ 10 V
FET function -
Power dissipation (maximum) 700mW(Ta)
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