SSM3K35MFV,L3F
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SSM3K35MFV,L3F
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SSM3K35MFV,L3F

Brand:Toshiba
Model:SSM3K35MFV,L3F
stock:90436
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series -
Part status On sale
working temperature 150°C
Encapsulation/Housing VESM
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 180mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 1.2V,4V
On resistance (maximum) for different Ids and Vgs 3 Ω @ 50mA,4V
Vgs (th) (maximum) for different Ids 1V @ 1mA
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) ±10V
Input capacitance at different Vds (Ciss) (maximum) 9.5 pF @ 3 V
FET function -
Power dissipation (maximum) 150mW(Ta)
Common problem
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