TPCC8136.LQ
Home
Category
MOSFET
TPCC8136.LQ
The pictures are for reference only
like

TPCC8136.LQ

Brand:Toshiba
Model:TPCC8136.LQ
stock:82717
Store:ShenZhen/Hongkong
DataSheet: Search
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR
series U-MOSVI
Part status On sale
working temperature 150°C
Encapsulation/Housing 8-TSON Advance(3.1x3.1)
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 9.4A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 1.8V,4.5V
On resistance (maximum) for different Ids and Vgs 16 mΩ @ 9.4A,4.5V
Vgs (th) (maximum) for different Ids 1.2V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 36 nC @ 5 V
Vgs (max) ±12V
Input capacitance at different Vds (Ciss) (maximum) 2350 pF @ 10 V
FET function -
Power dissipation (maximum) 700mW(Ta),18W(Tc)
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer