Installation type | Surface mount |
packing | CT |
series | OptiMOS™ 5 |
Part status | Not applicable to new design |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | PG-TDSON-8-6 |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 100 V |
Current at 25 ° C - continuous drain (Id) | 10A(Ta),44A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
On resistance (maximum) for different Ids and Vgs | 14.6 mΩ @ 22A,10V |
Vgs (th) (maximum) for different Ids | 2.3V @ 23µA |
Gate charge (Qg) at different Vgs (maximum) | 10 nC @ 4.5 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 1300 pF @ 50 V |
FET function | - |
Power dissipation (maximum) | 2.5W(Ta),52W(Tc) |