IRF7410GTRPBF
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IRF7410GTRPBF
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IRF7410GTRPBF

Brand:Infineon
Model:IRF7410GTRPBF
stock:26882
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Surface mount
packing TR,CT
series HEXFET®
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-SO
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 12 V
Current at 25 ° C - continuous drain (Id) 16A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 1.8V,4.5V
On resistance (maximum) for different Ids and Vgs 7 mΩ @ 16A,4.5V
Vgs (th) (maximum) for different Ids 900mV @ 250µA
Gate charge (Qg) at different Vgs (maximum) 91 nC @ 4.5 V
Vgs (max) ±8V
Input capacitance at different Vds (Ciss) (maximum) 8676 pF @ 10 V
FET function -
Power dissipation (maximum) 2.5W(Ta)
Common problem
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