Total: 12
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
standard
Schottky barrier
20 V
40 V
50 V
200 V
30 V
45 V
2A
3A
6A
500 mV @ 3 A
500 mV @ 2 A
1.2 V @ 6 A
-
150 ns
10 µA @ 50 V
200 µA @ 40 V
10 µA @ 200 V
150 µA @ 30 V
100 µA @ 20 V
300 µA @ 45 V
140pF @ 4V,1MHz