Total: 9
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
pipe
TR,bulk
bulk,pipe
CoolSiC™+
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
Schottky barrier
SiC Schottky
40 V
30 V
650 V
500mA
2A(DC)
1.7 V @ 2 A
640 mV @ 500 mA
600 mV @ 2 A
1.8 V @ 2 A
-
20 ns
0 ns
55 µA @ 40 V
200 µA @ 30 V
330 µA @ 650 V
35 µA @ 650 V
70pF @ 1V,1MHz