Total: 5
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
30 V
60 V
45 V
8A
10A
550 mV @ 8 A
520 mV @ 10 A
700 mV @ 8 A
-
1 mA @ 40 V
1 mA @ 30 V
1 mA @ 45 V
220 µA @ 60 V
1 mA @ 60 V
550pF @ 4V,1MHz