Total: 19
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TR,CT
On sale
stop production
Not applicable to new design
Rapid recovery=< 500ns,> 200mA(Io)
standard
Schottky barrier
100 V
40 V
50 V
200 V
400 V
600 V
1000 V
800 V
1A
1.5A
500mA
2A
460 mV @ 500 mA
1.3 V @ 2 A
560 mV @ 1 A
1 V @ 1.5 A
1.3 V @ 1.5 A
1.2 V @ 2 A
-
50 ns
500 ns
250 ns
150 ns
5 µA @ 1000 V
5 µA @ 100 V
5 µA @ 600 V
75 µA @ 40 V
5 µA @ 400 V
5 µA @ 200 V
5 µA @ 800 V
5 µA @ 50 V
35pF @ 4V,1MHz