Total: 26
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
20 V
40 V
30 V
500mA
350mA(DC)
600 mV @ 200 mA
810 mV @ 500 mA
-
10 ns
5 µA @ 30 V
5 µA @ 20 V
5 µA @ 10 V
15 µA @ 40 V
28pF @ 0V,1MHz