Total: 41
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
-
Surface mount
CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Standard recovery>500ns,> 200mA(Io)
standard
Schottky barrier
20 V
100 V
40 V
50 V
200 V
600 V
800 V
30 V
70 V
35 V
15 V
1A
200mA(DC)
8A
200mA
1.5A
2A
3A
5A
25A
15mA(DC)
350mA(DC)
1.1 V @ 1 A
600 mV @ 1 A
980 mV @ 1 A
800 mV @ 100 mA
1.25 V @ 200 mA
1.2 V @ 1 A
600 mV @ 200 mA
510 mV @ 8 A
550 mV @ 2 A
510 mV @ 1 A
450 mV @ 3 A
450 mV @ 25 A
460 mV @ 1.5 A
395 mV @ 1 A
410 mV @ 1 mA
370 mV @ 5 A
360 mV @ 1 A
360 mV @ 1.5 A
370 mV @ 3 A
400 mV @ 3 A
5 ns
50 ns
35 ns
10 ns
200 ns
1 mA @ 40 V
2 µA @ 25 V
1 mA @ 30 V
200 µA @ 20 V
100 nA @ 200 V
5 µA @ 100 V
5 µA @ 600 V
50 µA @ 30 V
10 µA @ 200 V
500 µA @ 40 V
5 µA @ 200 V
5 µA @ 800 V
100 µA @ 40 V
5 µA @ 50 V
500 µA @ 30 V
1.4 mA @ 35 V
15 mA @ 15 V
200 nA @ 50 V
1.5 mA @ 30 V
5 µA @ 20 V
5 mA @ 30 V
8 mA @ 30 V
2pF @ 0V,1MHz
10pF @ 1V,1MHz
5pF @ 0V,1MHz
15pF @ 4V,1MHz
28pF @ 0V,1MHz