Total: 78
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
-
Surface mount
Through-Hole
Base installation
bulk
pallet
TR
TR,CT
pipe
TR,CT,bulk
TR,bulk
bulk,pipe
Automotive, AEC-Q101
Stealth™
Final sale
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Standard recovery>500ns,> 200mA(Io)
standard
Schottky barrier
20 V
100 V
80 V
1200 V
40 V
50 V
200 V
400 V
600 V
30 V
150 V
60 V
650 V
45 V
350 V
750 V
1400 V
325 V
250mA(DC)
1A
200mA
2A
3A
10A
15A
30A
5A
60A
700mA
6A
12A
300mA
225A(DC)
160A(DC)
300mA(DC)
400mA(DC)
71A(DC)
29.2A(DC)
52.3A(DC)
104A
171A
1 V @ 100 mA
1.25 V @ 150 mA
1.1 V @ 1 A
1.25 V @ 200 mA
500 mV @ 1 A
500 mV @ 3 A
1 V @ 1 A
875 mV @ 1 A
940 mV @ 2 A
670 mV @ 5 A
2.1 V @ 30 A
1.5 V @ 30 A
1.3 V @ 60 A
1.1 V @ 100 mA
550 mV @ 5 A
500 mV @ 2 A
550 mV @ 12 A
2.6 V @ 15 A
540 mV @ 5 A
1.5 V @ 6 A
2.1 V @ 6 A
2.2 V @ 15 A
850 mV @ 5 A
875 mV @ 3 A
1.25 V @ 3 A
1.5 V @ 15 A
630 mV @ 2 A
650 mV @ 2 A
720 mV @ 10 A
730 mV @ 12 A
690 mV @ 5 A
570 mV @ 10 A
570 mV @ 15 A
1.95 V @ 200 A
1.9 V @ 160 A
1.29 V @ 200 mA
1.1 V @ 2 A
2 V @ 30 A
2 V @ 700 mA
2 V @ 1 A
2 V @ 2 A
2 V @ 45 A
2 V @ 15 A
4 ns
60 ns
50 ns
75 ns
35 ns
85 ns
40 ns
30 ns
100 ns
45 ns
70 ns
15.72 ns
12.5 ns
9.65 ns
12.62 ns
140 ns
223 ns
132 ns
87 ns
126 ns
1 µA @ 75 V
50 µA @ 600 V
100 nA @ 200 V
10 µA @ 400 V
10 µA @ 600 V
50 µA @ 100 V
500 µA @ 40 V
100 µA @ 600 V
100 µA @ 30 V
5 µA @ 200 V
2 µA @ 150 V
100 µA @ 40 V
500 µA @ 20 V
500 µA @ 60 V
500 µA @ 100 V
250 µA @ 600 V
500 µA @ 50 V
100 µA @ 400 V
500 µA @ 30 V
100 nA @ 150 V
2 µA @ 50 V
100 µA @ 45 V
500 µA @ 80 V
400 µA @ 40 V
50 µA @ 60 V
50 µA @ 45 V
12 µA @ 60 V
55 µA @ 100 V
120 µA @ 45 V
90 µA @ 45 V
29 µA @ 100 V
70 µA @ 100 V
30 µA @ 750 V
30 µA @ 650 V
1 µA @ 240 V
150 nA @ 250 V
20 mA @ 1200 V
20 mA @ 1400 V
2pF @ 0V,1MHz
5pF @ 0V,1MHz
2.5pF @ 0V,1MHz
500pF @ 4V,1MHz
110pF @ 4V,1MHz
380pF @ 4V,1MHz
159pF @ 10V,1MHz
485pF @ 0V,1MHz
98pF @ 4V,1MHz
54.4pF @ 100V,1MHz
300pF @ 45V,1MHz
0.9pF @ 0V,1MHz