Total: 63
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
-
Surface mount
Through-Hole
bulk
TR
TR,CT
pipe
TR,CT,bulk
TB
bulk,TB
CT,TB
CT,bulk,TB
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Standard recovery>500ns,> 200mA(Io)
standard
Schottky barrier
avalanche
75 V
20 V
100 V
1500 V
80 V
1200 V
40 V
50 V
200 V
400 V
600 V
1000 V
800 V
30 V
500 V
150 V
250mA(DC)
1A
155mA(DC)
200mA(DC)
10A(DC)
6A(DC)
215mA(DC)
8A
500mA(DC)
200mA
1.5A
600mA
850mA
4A
1A(DC)
7A(DC)
12A(DC)
120mA(DC)
1 V @ 100 mA
450 mV @ 1 A
1.25 V @ 150 mA
1.8 V @ 20 A
1.6 V @ 6.5 A
1.2 V @ 100 mA
1.85 V @ 20 A
550 mV @ 500 mA
1 V @ 10 mA
1.1 V @ 1 A
600 mV @ 1 A
1.05 V @ 1 A
1.3 V @ 1 A
980 mV @ 1 A
800 mV @ 100 mA
550 mV @ 1 A
1.28 V @ 4 A
2 V @ 20 A
1.3 V @ 6.5 A
1.45 V @ 6.5 A
1.35 V @ 6.5 A
3.4 V @ 8 A
1.25 V @ 200 mA
1 V @ 40 mA
4 ns
600 ns
160 ns
145 ns
3 µs
300 ns
25 ns
5 ns
60 ns
135 ns
350 ns
230 ns
220 ns
65 ns
18 ns
50 ns
5 µA @ 75 V
1 mA @ 20 V
500 nA @ 80 V
25 nA @ 20 V
1 µA @ 75 V
100 µA @ 1300 V
250 µA @ 1300 V
1 mA @ 1000 V
100 µA @ 35 V
10 µA @ 50 V
1 mA @ 40 V
1 µA @ 200 V
1 µA @ 400 V
1 µA @ 600 V
1 µA @ 1000 V
1 µA @ 100 V
1 µA @ 800 V
2 µA @ 25 V
1 mA @ 30 V
50 µA @ 600 V
5 nA @ 75 V
400 µA @ 500 V
400 µA @ 150 V
400 µA @ 600 V
200 µA @ 20 V
1 mA @ 800 V
20 µA @ 600 V
100 nA @ 200 V
10 µA @ 40 V
2pF @ 0V,1MHz
70pF @ 4V,1MHz
1.5pF @ 0V,1MHz
4pF @ 0V,1MHz
90pF @ 0V,1MHz
50pF @ 4V,1MHz
21pF @ 0V,1MHz
20pF @ 0V,1MHz
50pF @ 0V,1MHz
10pF @ 1V,1MHz
70pF @ 5V,1MHz
1pF @ 0V,1MHz
5pF @ 0V,1MHz