Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
1A
2A
3A
550 mV @ 1 A
550 mV @ 2 A
510 mV @ 1 A
550 mV @ 3 A
-
200 µA @ 40 V
500 µA @ 40 V
100 µA @ 40 V