Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
TR,CT,bulk
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
2A(DC)
500 mV @ 2 A
550 mV @ 2 A
-
5.5 ns
150 µA @ 40 V
300 µA @ 30 V
50pF @ 25V,1MHz