Total: 58
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TR,CT
pipe
TR,CT,bulk
TR,bulk
bulk,pipe
CoolSiC™+
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
Schottky barrier
SiC Schottky
100 V
1200 V
50 V
200 V
400 V
600 V
150 V
650 V
170 V
8A(DC)
1.75 V @ 8 A
1.7 V @ 6 A
2.1 V @ 8 A
1.7 V @ 8 A
1.8 V @ 8 A
1.75 V @ 6 A
890 mV @ 8 A
1.06 V @ 8 A
1.6 V @ 8 A
1.95 V @ 8 A
-
60 ns
35 ns
0 ns
10 µA @ 40 V
100 µA @ 600 V
40 µA @ 650 V
200 µA @ 1200 V
200 µA @ 650 V
30 µA @ 170 V
10 µA @ 320 V
10 µA @ 480 V
10 µA @ 80 V
10 µA @ 120 V
10 µA @ 160 V
300 µA @ 600 V
140 µA @ 650 V
90 µA @ 650 V
40 µA @ 1200 V
70 µA @ 600 V
280 µA @ 650 V
1.4 mA @ 650 V
538pF @ 1V,100kHz
259pF @ 1V,100kHz
237pF @ 1V,1MHz
463pF @ 1V,100kHz
365pF @ 1V,100kHz
150pF @ 5V,1MHz
200pF @ 5V,1MHz
28pF @ 650V,1MHz
44pF @ 650V,1MHz
365pF @ 1V,1MHz
310pF @ 1V,1MHz
250pF @ 1V,1MHz
240pF @ 1V,1MHz
280pF @ 0V,1MHz