Total: 11
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
Automotive, AEC-Q101
POWERMITE®
SBR®
SBR
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Schottky barrier
Level barrier
20 V
40 V
50 V
60 V
1A
2A
3A
650 mV @ 3 A
-
10.62 ns
200 µA @ 50 V
100 µA @ 60 V
200 µA @ 60 V
100 µA @ 10 V
100 µA @ 50 V
50 µA @ 20 V
110pF @ 4V,1MHz
90pF @ 10V,1MHz