5V @ 250µA-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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FET, MOSFET

Total: 5

Store: ShenZhen/Hongkong

Description：MOSFET N/P-CH 40V 8SOIC

Store: ShenZhen/Hongkong

Description：MOSFET N/P-CH 40V 7.5A/6A 8SOIC

Brand：Microchip

Store: ShenZhen/Hongkong

Description：PM-MOSFET-OTHER-SP3X

Price：1+

￥309.30

Brand：Infineon

Store: ShenZhen/Hongkong

Description：MOSFET 2N-CH 100V 11A TO220-5

IRFI4212H-117PXKMA1

Brand：Infineon

Store: ShenZhen/Hongkong

Description：MOSFET 2N-CH 100V 11A TO220-5

Price：1+

￥1.92

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

Through-Hole

Base installation

packing

bulk

TR

pipe

bulk,pipe

series

PowerTrench®

Part status

On sale

stop production

working temperature

-55°C ~ 150°C(TJ)

-40°C ~ 125°C(Tc)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

module

TO-220-5 Full package,feedthrough

TO-220-5 Whole package

FET Type

N and P Channel

2 N-channels(two)

6 N-Channel(3 Phase bridge)

Drain source voltage (Vdss)

40V

100V

200V

Current at 25 ° C - continuous drain (Id)

11A(Tc)

108A(Tc)

11A

7.5A,6A

5.5A,4.4A

On resistance (maximum) for different Ids and Vgs

39 mΩ @ 5.5A,10V

9.7 mΩ @ 81A,10V

72.5 mΩ @ 6.6A,10V

22 mΩ @ 7.5A,10V

Vgs (th) (maximum) for different Ids

5V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

18nC @ 10V

10nC @ 10V

21nC @ 10V

161nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

490pF @ 50V

10.7nF @ 50V

900pF @ 20V

410pF @ 20V

FET function

standard

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