Total: 45
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Nexperia
Base installation
bulk
pallet
CoolMOS™
POWER MOS 7®
On sale
-40°C ~ 150°C(TJ)
SP6
2 N-channels(two)
2 N channels(half-bridge)
2 N Channel(two)Asymmetric type
4 N channels(H )
6 N-Channel(3 Phase bridge)
4 N channels(Three stage inverter)
100V
1200V(1.2kV)
200V
500V
600V
1000V(1kV)
800V
75V
78A(Tc)
60A
220A(Tc)
70A
50A
372A
95A
90A
150A
51A
28A
72A
22A
139A
175A
120A
208A
104A
278A
99A
43A
34A
317A
56A
300A
65A
163A
495A
143A
180A
78A
147A(Tc)
219A(Tc)
24 mΩ @ 47.5A,10V
210 mΩ @ 21.5A,10V
10 mΩ @ 104A,10V
5 mΩ @ 125A,10V
18 mΩ @ 71.5A,10V
22.5 mΩ @ 81.5A,10V
6 mΩ @ 158.5A,10V
5 mΩ @ 186A,10V
105 mΩ @ 39A,10V
20 mΩ @ 90A,10V
2.5 mΩ @ 200A,10V
17 mΩ @ 100A,20V
4.5 mΩ @ 60A,10V
150 mΩ @ 14A,10V
45 mΩ @ 45A,10V
28 mΩ @ 75A,10V
78 mΩ @ 25.5A,10V
21 mΩ @ 35A,10V
35 mΩ @ 72A,10V
420 mΩ @ 11A,10V
10 mΩ @ 69.5A,10V
12 mΩ @ 87.5A,10V
19 mΩ @ 52A,10V
39 mΩ @ 49.5A,10V
348 mΩ @ 17A,10V
75 mΩ @ 28A,10V
7.2 mΩ @ 150A,10V
5 mΩ @ 158.5A,10V
156 mΩ @ 32.5A,10V
240 mΩ @ 25A,10V
175 mΩ @ 30A,10V
12 mΩ @ 150A,20V
33 mΩ @ 60A,20V
4V @ 2.5mA
5V @ 2.5mA
5V @ 5mA
4V @ 1mA
3.9V @ 2mA
4V @ 5mA
3.9V @ 5.4mA
3.9V @ 5mA
3.9V @ 4mA
5V @ 10mA
4V @ 10mA
5V @ 6mA
2.4V @ 30mA(standard)
2.2V @ 3mA(standard)
2.4V @ 20mA(standard)
560nC @ 10V
300nC @ 10V
246nC @ 10V
434nC @ 10V
140nC @ 10V
200nC @ 10V
180nC @ 10V
518nC @ 10V
186nC @ 10V
350nC @ 10V
224nC @ 10V
153nC @ 10V
280nC @ 10V
700nC @ 10V
372nC @ 10V
374nC @ 10V
448nC @ 10V
364nC @ 10V
325nC @ 10V
562nC @ 10V
492nC @ 10V
1360nC @ 10V
600nC @ 10V
1036nC @ 10V
748nC @ 10V
744nC @ 10V
483nC @ 20V
148nC @ 20V
322nC @ 20V
28900pF @ 25V
14400pF @ 25V
11200pF @ 25V
19600pF @ 25V
7000pF @ 25V
5100pF @ 25V
4507pF @ 25V
14000pF @ 25V
5200pF @ 25V
9875pF @ 25V
13700pF @ 25V
4530pF @ 25V
7220pF @ 25V
20000pF @ 25V
10400pF @ 25V
10300pF @ 25V
27400pF @ 25V
9015pF @ 25V
18500pF @ 25V
15200pF @ 25V
22400pF @ 25V
40000pF @ 25V
28000pF @ 25V
20600pF @ 25V
20700pF @ 25V
8400pF @ 1000V
2850pF @ 1000V
5600pF @ 1000V
Grade knot
standard
SiC