Base installation1200V(1.2kV)2 N Channel(phase angle)5.2 mΩ @ 240A,20V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Base installation

packing

box

pipe

series

Part status

On sale

working temperature

-40°C ~ 175°C(TJ)

Encapsulation/Housing

module

FET Type

2 N Channel(phase angle)

Drain source voltage (Vdss)

1200V(1.2kV)

Current at 25 ° C - continuous drain (Id)

495A(Tc)

On resistance (maximum) for different Ids and Vgs

5.2 mΩ @ 240A,20V

Vgs (th) (maximum) for different Ids

2.8V @ 6mA

Gate charge (Qg) at different Vgs (maximum)

1392nC @ 20V

Input capacitance at different Vds (Ciss) (maximum)

18.1pF @ 1000V

18100pF @ 1kV

FET function

SiC