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SCTWA60N120G2-4
Brand：ST
Stock：99588
Store: ShenZhen/Hongkong
Description：SILICON CARBIDE POWER MOSFET 120
Offer
Price：1+
￥42.15
Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

On sale

technology

SiCFET(silicon carbide)

FET Type

N channels

Vgs (max)

+22V,-10V

FET function

-

Power dissipation (maximum)

388W(Tc)

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