Total: 48
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
On sale
Final sale
stop production
Not applicable to new design
MOSFET(Metal oxide)
P channels
N channels
±20V
±30V
±12V
±22V
±16V
±18V
±8V
-
Schottky diode (isolated)
2.5W(Tc)