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MOSFET

Total: 15

IPD048N06L3GATMA1
Brand：Infineon
Stock：40685
Store: ShenZhen/Hongkong
Description：MOSFET N-CH 60V 90A TO252-3
Offer
IPF04N03LA
Brand：Infineon
Stock：29024
Store: ShenZhen/Hongkong
Description：MOSFET N-CH 25V 50A TO252-3
Offer
IRLR8103VPBF
Brand：Infineon
Stock：82227
Store: ShenZhen/Hongkong
Description：MOSFET N-CH 30V 91A DPAK
Offer
Price：1+
￥0.45
IAUC90N10S5N062ATMA1
Brand：Infineon
Stock：93945
Store: ShenZhen/Hongkong
Description：MOSFET N-CH 100V 90A TDSON-8-34
Offer
Price：1+
￥3.04
IPP057N06N3GXKSA1
Brand：Infineon
Stock：94771
Store: ShenZhen/Hongkong
Description：MOSFET N-CH 60V 80A TO220-3
Offer
Price：1+
￥2.37
IPP052N06L3GXKSA1
Brand：Infineon
Stock：53266
Store: ShenZhen/Hongkong
Description：MOSFET N-CH 60V 80A TO220-3
Offer
Price：1+
￥2.31
IPC100N04S5L1R5ATMA1
Brand：Infineon
Stock：51910
Store: ShenZhen/Hongkong
Description：MOSFET N-CH 40V 100A 8TDSON-34
Offer
Price：1+
￥2.40
IPC100N04S51R7ATMA1
Brand：Infineon
Stock：9776
Store: ShenZhen/Hongkong
Description：MOSFET N-CH 40V 100A 8TDSON-34
Offer
Price：1+
￥2.40
IPB054N06N3GATMA1
Brand：Infineon
Stock：94948
Store: ShenZhen/Hongkong
Description：MOSFET N-CH 60V 80A D2PAK
Offer
Price：1+
￥2.51
IMW120R090M1HXKSA1
Brand：Infineon
Stock：38182
Store: ShenZhen/Hongkong
Description：SICFET N-CH 1.2KV 26A TO247-3
Offer
Price：1+
￥16.32
IAUC120N04S6N013ATMA1
Brand：Infineon
Stock：20411
Store: ShenZhen/Hongkong
Description：IAUC120N04S6N013ATMA1
Offer
Price：1+
￥2.60
IPB100N04S4H2ATMA1
Brand：Infineon
Stock：79645
Store: ShenZhen/Hongkong
Description：MOSFET N-CH 40V 100A TO263-3
Offer
Price：1+
￥2.58
IAUC120N04S6L012ATMA1
Brand：Infineon
Stock：64751
Store: ShenZhen/Hongkong
Description：IAUC120N04S6L012ATMA1
Offer
Price：1+
￥2.60
IMZ120R090M1HXKSA1
Brand：Infineon
Stock：24506
Store: ShenZhen/Hongkong
Description：SICFET N-CH 1.2KV 26A TO247-4
Offer
Price：1+
￥16.25
IRFZ44VPBF
Brand：Infineon
Stock：46947
Store: ShenZhen/Hongkong
Description：MOSFET N-CH 60V 55A TO220AB
Offer
Price：1+
￥2.00
Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

On sale

technology

MOSFET(Metal oxide)

SiCFET(silicon carbide)

FET Type

N channels

Vgs (max)

±20V

±16V

+23V,-7V

FET function

-

Power dissipation (maximum)

115W(Tc)

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