MOSFET N-CH 30V 6.1A SUPERSOT6 FDC855N
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Description:
MOSFET N-CH 30V 6.1A SUPERSOT6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDC855N(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory9497,Price reference "real-time change" China/Hongkong。 FDC855N package/specs, Download FDC855N、Datasheet。