MOSFET N-CH 900V 6.3A D2PAK FQB8N90CTM
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Description:
MOSFET N-CH 900V 6.3A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB8N90CTM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory70792,Price reference "real-time change" China/Hongkong。 FQB8N90CTM package/specs, Download FQB8N90CTM、Datasheet。