MOSFET N-CH 100V 10A IPAK HUF76609D3
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Description:
MOSFET N-CH 100V 10A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
HUF76609D3(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory28693,Price reference "real-time change" China/Hongkong。 HUF76609D3 package/specs, Download HUF76609D3、Datasheet。