MOSFET N-CH 20V 4.2A 8SO IRF1902GTRPBF
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Description:
MOSFET N-CH 20V 4.2A 8SO
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRF1902GTRPBF(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory48919,Price reference "real-time change" China/Hongkong。 IRF1902GTRPBF package/specs, Download IRF1902GTRPBF、Datasheet。