IAUS300N04S4N007ATMA1 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IAUS300N04S4N007ATMA1

Description:

MOSFET_(20V 40V) PG-HSOG-8

Stock:

36038

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Phone：13794459602(Wechat)

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Parameters

Current at 25 ° C - continuous drain (Id)

300A(Tc)

Drain source voltage (Vdss)

40 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

342 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

27356 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

740 mΩ @ 100A,10V

Power dissipation (maximum)

375W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 275µA

packing

series

OptiMOS™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

PG-HSOG-8-1

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

下载IAUS300N04S4N007ATMA1.pdf

IAUS300N04S4N007ATMA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory36038,Price reference "real-time change" China/Hongkong。 IAUS300N04S4N007ATMA1 package/specs, Download IAUS300N04S4N007ATMA1、Datasheet。