DMN31D6UT-13
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DMN31D6UT-13
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DMN31D6UT-13

Brand:Diodes
Model:DMN31D6UT-13
stock:30189
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.06
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing SOT-523
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 350mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.5V,4.5V
On resistance (maximum) for different Ids and Vgs 1.5 Ω @ 100mA,4.5V
Vgs (th) (maximum) for different Ids 1.4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 0.35 nC @ 4.5 V
Vgs (max) ±12V
Input capacitance at different Vds (Ciss) (maximum) 13.6 pF @ 15 V
FET function -
Power dissipation (maximum) 320mW
Common problem
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