TK32E12N1,S1X
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likeTK32E12N1,S1X
Brand：Toshiba
Model：TK32E12N1,S1X
stock：24267
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
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Price：1+
￥1.87
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| Installation type | Through-Hole |
| packing | pipe |
| series | U-MOSVIII-H |
| Part status | On sale |
| working temperature | 150°C(TJ) |
| Encapsulation/Housing | TO-220 |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 120 V |
| Current at 25 ° C - continuous drain (Id) | 60A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 13.8 mΩ @ 16A,10V |
| Vgs (th) (maximum) for different Ids | 4V @ 500µA |
| Gate charge (Qg) at different Vgs (maximum) | 34 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 2000 pF @ 60 V |
| FET function | - |
| Power dissipation (maximum) | 98W(Tc) |
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