TPCP8003-H(TE85L,F
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likeTPCP8003-H(TE85L,F
Brand：Toshiba
Model：TPCP8003-H(TE85L,F
stock：55680
Store：ShenZhen/Hongkong
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| Installation type | Surface mount |
| packing | TR |
| series | U-MOSIII-H |
| Part status | stop production |
| working temperature | 150°C(TJ) |
| Encapsulation/Housing | PS-8(2.9x2.4) |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 100 V |
| Current at 25 ° C - continuous drain (Id) | 2.2A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 180 mΩ @ 1.1A,10V |
| Vgs (th) (maximum) for different Ids | 2.3V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 7.5 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 360 pF @ 10 V |
| FET function | - |
| Power dissipation (maximum) | 840mW(Ta) |
Common problem
Industry trends
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