IPD65R660CFDAATMA1
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likeIPD65R660CFDAATMA1
Brand：Infineon
Model：IPD65R660CFDAATMA1
stock：2778
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price：1+
￥3.47
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| Installation type | Surface mount |
| packing | TR,CT,bulk |
| series | Automotive, AEC-Q101, CoolMOS™ |
| Part status | On sale |
| working temperature | -40°C ~ 150°C(TJ) |
| Encapsulation/Housing | PG-TO252-3 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 650 V |
| Current at 25 ° C - continuous drain (Id) | 6A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 660 mΩ @ 3.22A,10V |
| Vgs (th) (maximum) for different Ids | 4.5V @ 214.55µA |
| Gate charge (Qg) at different Vgs (maximum) | 20 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 543 pF @ 100 V |
| FET function | - |
| Power dissipation (maximum) | 62.5W(Tc) |
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