Total: 22
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TR,CT
pipe
TR,CT,bulk
TR,bulk
bulk,pipe
Automotive, AEC-Q101
CoolSiC™+
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
Schottky barrier
SiC Schottky
20 V
1200 V
40 V
600 V
30 V
650 V
2A(DC)
1.7 V @ 2 A
500 mV @ 2 A
550 mV @ 2 A
470 mV @ 2 A
480 mV @ 2 A
600 mV @ 2 A
1.6 V @ 2 A
1.65 V @ 2 A
1.9 V @ 2 A
1.8 V @ 2 A
2.1 V @ 2 A
-
0 ns
28 ns
5.5 ns
200 µA @ 30 V
150 µA @ 20 V
150 µA @ 30 V
150 µA @ 40 V
15 µA @ 600 V
80 µA @ 20 V
300 µA @ 30 V
20 µA @ 650 V
18 µA @ 1200 V
330 µA @ 650 V
35 µA @ 650 V
27 µA @ 1200 V
48 µA @ 1200 V
70pF @ 1V,1MHz
75pF @ 2V,1MHz
50pF @ 25V,1MHz
8.7pF @ 650V,1MHz
182pF @ 1V,1MHz
60pF @ 1V,1MHz
125pF @ 1V,1MHz