Total: 27
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
On sale
stop production
SiCFET(silicon carbide)
SiC(Silicon carbide bonded crystal tube)
N channels
+25V,-15V
-
357W(Tc)
170W(Tc)
136W(Tc)
111W(Tc)
535W(Tc)
348W(Tc)
3.7W(Ta),468W(Tc)
510W(Tc)
319W(Tc)
179W(Tc)
178W(Tc)
119W(Tc)
170mW(Tc)