Total: 27
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
On sale
Not applicable to new design
MOSFET(Metal oxide)
SiCFET(silicon carbide)
P channels
N channels
-
±20V
±12V
±25V,-10V
+18V,-15V
standard
300W(Tc)
170W(Tc)
136W(Tc)
52W(Tc)
3W(Ta)
214W(Tc)
46W(Tc)
65W(Tc)
400mW(Ta)
272W(Tc)
83W(Tc)
36W(Tc)
181W(Tc)
107W(Tc)
225mW(Ta)
69W(Tc)
227W(Tc)
490mW
500mW
78689-0001