Total: 464
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
On sale
Final sale
stop production
Not applicable to new design
-
MOSFET(Metal oxide)
SiCFET(silicon carbide)
P channels
N channels
±20V
+25V,-10V
±30V
±25V
±16V
±15V
Clamp bit
+18V,-15V
standard
Temperature detection diode
300W(Tc)