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    Home/    Category/    MOSFET/    NVB099N65S3

    SF3 650V EASY 99MOHM D2PAK AUTO NVB099N65S3

    NVB099N65S3 image
    The pictures are for reference only
    Brand:
    ON
    Model:
    NVB099N65S3
    Description:
    SF3 650V EASY 99MOHM D2PAK AUTO
    Stock:
    92607
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：13794459602(Wechat)
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    30A(Tc)
  • Drain source voltage (Vdss)
    650 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    61 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    2480 pF @ 400 V
  • On resistance (maximum) for different Ids and Vgs
    99 mΩ @ 15A,10V
  • Power dissipation (maximum)
    227W(Tc)
  • Vgs (max)
    ±30V
  • Vgs (th) (maximum) for different Ids
    4.5V @ 740µA
  • packing
    TR
  • series
    SuperFET® III
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    D²PAK-3(TO-263-3)
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    NVB099N65S3（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory92607,Price reference "real-time change" China/Hongkong。 NVB099N65S3 package/specs, Download NVB099N65S3、Datasheet。
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    ICQQG images/产品内页BANNER英文.jpg
    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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