MOSFET N-CH 30V 17.2A 8SO IRF8113GTRPBF
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Description:
MOSFET N-CH 30V 17.2A 8SO
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRF8113GTRPBF(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory59923,Price reference "real-time change" China/Hongkong。 IRF8113GTRPBF package/specs, Download IRF8113GTRPBF、Datasheet。